IRFP250MPBF vs IRF150P220AKMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFP250MPBF disebabkan oleh Infineon dan IRF150P220AKMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFP250MPBF | IRF150P220AKMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $2.55 | — |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Part Number | IRFP250MPBF | IRF150P220AKMA1 |
| Jenis Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Technology | HEXFET (IR MOSFET) | StrongIRFET |
| Drain-Source Voltage (Vds) | 200 V | — |
| Continuous Drain Current (Id) at Tc=25C | 30 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current value] | — |
| Static Drain-Source On-Resistance (RDS(on)) | 75 mOhm max @ Vgs=10V | — |
| Gate-Source Threshold Voltage (Vgs(th)) | 4 V (typ) | — |
| Total Gate Charge (Qg) | 82 nC | — |
| Power Dissipation (Pd) at Tc=25C | 214 W | 556 W |
| Suhu Hubungan Operasi | -55C to +175C | — |
| Kemasan / Case | TO-247AC (3-pin + tab) | — |
| Jenis Pemasangan | Through Hole | Through Hole |
| Bilangan Pin | 3 | — |
| Avalanche Rated | Yes | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Aras MSL | 1 (unlimited) | — |
| Drain-Source Voltage (VDS max) | — | 150 V |
| Continuous Drain Current (ID) at Tc=25C | — | 203 A |
| On-Resistance (RDS(on) max) at VGS=10V | — | 2.7 mOhm |
| Gate-Source Voltage (VGS max) | — | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typ] |
| Power Dissipation (Pd) at Ta=25C | — | 3.8 W |
| Gambaran Suhu Operasi | — | -55C to +175C |
| Kemasan | — | TO-247-3 (PG-TO247-3) |
| Terminal Finish | — | Tin (Sn) |
| JESD-609 Code | — | e3 |