IRFP250MPBF vs IRF150P220AKMA1 比較
詳細並排比較 IRFP250MPBF 由 Infineon 與 IRF150P220AKMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRFP250MPBF | IRF150P220AKMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | $2.55 | — |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Part Number | IRFP250MPBF | IRF150P220AKMA1 |
| 電晶體類型 | N-Channel MOSFET | N-Channel MOSFET |
| Technology | HEXFET (IR MOSFET) | StrongIRFET |
| Drain-Source Voltage (Vds) | 200 V | — |
| Continuous Drain Current (Id) at Tc=25C | 30 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current value] | — |
| Static Drain-Source On-Resistance (RDS(on)) | 75 mOhm max @ Vgs=10V | — |
| Gate-Source Threshold Voltage (Vgs(th)) | 4 V (typ) | — |
| Total Gate Charge (Qg) | 82 nC | — |
| Power Dissipation (Pd) at Tc=25C | 214 W | 556 W |
| 工作接面溫度 | -55C to +175C | — |
| 封裝 / 外殼 | TO-247AC (3-pin + tab) | — |
| 安裝類型 | Through Hole | Through Hole |
| 腳位數 | 3 | — |
| Avalanche Rated | Yes | — |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| MSL 等級 | 1 (unlimited) | — |
| Drain-Source Voltage (VDS max) | — | 150 V |
| Continuous Drain Current (ID) at Tc=25C | — | 203 A |
| On-Resistance (RDS(on) max) at VGS=10V | — | 2.7 mOhm |
| Gate-Source Voltage (VGS max) | — | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typ] |
| Power Dissipation (Pd) at Ta=25C | — | 3.8 W |
| 工作溫度範圍 | — | -55C to +175C |
| 封裝 | — | TO-247-3 (PG-TO247-3) |
| Terminal Finish | — | Tin (Sn) |
| JESD-609 Code | — | e3 |