IRFZ44NPBF vs IRF530NPBF Perbandingan
Perbandingan bersamaan detil IRFZ44NPBF dari Infineon dan IRF530NPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFZ44NPBF | IRF530NPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at Tc=25C | 49 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 60 A |
| Gate-to-Source Voltage (VGS) max | +/- 20 V | — |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 17.5 mOhm | 90 mOhm (max, approximate per datasheet) |
| Total Gate Charge (Qg) | 42 nC | — |
| Power Dissipation (PD) at Tc=25C | 94 W | — |
| Thermal Resistance Junction-to-Case (RthJC) | 1.0 C/W | — |
| Thermal Resistance Junction-to-Ambient (RthJA) | 62 C/W | — |
| Suhu Hubung Kerja | -55C to +175C | -55 C to +175 C |
| Paket | TO-220AB (3-pin + tab) | — |
| Tipe Mounting | Through Hole | Through Hole |
| Technology | HEXFET (Advanced Process) | — |
| Avalanche Energy Rating (EAS) | [DATA_NEEDED: EAS rating] | — |
| Status RoHS | Compliant | Compliant |
| Part Number | — | IRF530NPBF |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Tipe Transistor | — | N-Channel HEXFET Power MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tc | — | 17 A |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | 2.0 V to 4.0 V |
| Maximum Power Dissition (Pd) at Tc | — | 70 W |
| Paket / Case | — | TO-220AB (through-hole) |
| Avalanche Rated | — | Yes |
| Level MSL | — | N/A (through-hole) |
| Configuration | — | Single N-channel, 3 pins (Gate, Drain, Source) |