IRFZ44NPBF vs IRF530NPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFZ44NPBF disebabkan oleh Infineon dan IRF530NPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFZ44NPBF IRF530NPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at Tc=25C 49 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 60 A
Gate-to-Source Voltage (VGS) max +/- 20 V —
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V 17.5 mOhm 90 mOhm (max, approximate per datasheet)
Total Gate Charge (Qg) 42 nC —
Power Dissipation (PD) at Tc=25C 94 W —
Thermal Resistance Junction-to-Case (RthJC) 1.0 C/W —
Thermal Resistance Junction-to-Ambient (RthJA) 62 C/W —
Suhu Hubungan Operasi -55C to +175C -55 C to +175 C
Kemasan TO-220AB (3-pin + tab) —
Jenis Pemasangan Through Hole Through Hole
Technology HEXFET (Advanced Process) —
Avalanche Energy Rating (EAS) [DATA_NEEDED: EAS rating] —
Status RoHS Compliant Compliant
Part Number — IRF530NPBF
Manufacturer — Infineon Technologies (formerly International Rectifier)
Jenis Transistor — N-Channel HEXFET Power MOSFET
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tc — 17 A
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — 2.0 V to 4.0 V
Maximum Power Dissition (Pd) at Tc — 70 W
Kemasan / Case — TO-220AB (through-hole)
Avalanche Rated — Yes
Aras MSL — N/A (through-hole)
Configuration — Single N-channel, 3 pins (Gate, Drain, Source)

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