IRFZ44NPBF vs IRF530NPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFZ44NPBF sa pamamagitan ng Infineon at IRF530NPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFZ44NPBF IRF530NPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at Tc=25C 49 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 60 A
Gate-to-Source Voltage (VGS) max +/- 20 V —
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V 17.5 mOhm 90 mOhm (max, approximate per datasheet)
Total Gate Charge (Qg) 42 nC —
Power Dissipation (PD) at Tc=25C 94 W —
Thermal Resistance Junction-to-Case (RthJC) 1.0 C/W —
Thermal Resistance Junction-to-Ambient (RthJA) 62 C/W —
Temperature ng Junction na Operasyon -55C to +175C -55 C to +175 C
Packhaging TO-220AB (3-pin + tab) —
Uri ng Pagpapasok Through Hole Through Hole
Technology HEXFET (Advanced Process) —
Avalanche Energy Rating (EAS) [DATA_NEEDED: EAS rating] —
Tindminan RoHS Compliant Compliant
Part Number — IRF530NPBF
Manufacturer — Infineon Technologies (formerly International Rectifier)
Uri ng Transistor — N-Channel HEXFET Power MOSFET
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tc — 17 A
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — 2.0 V to 4.0 V
Maximum Power Dissition (Pd) at Tc — 70 W
Packhaging / Kaso — TO-220AB (through-hole)
Avalanche Rated — Yes
Level ng MSL — N/A (through-hole)
Configuration — Single N-channel, 3 pins (Gate, Drain, Source)

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