IRLML0030TRPBF vs IRLML2803TRPBF Perbandingan

Perbandingan bersamaan detil IRLML0030TRPBF dari Infineon dan IRLML2803TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRLML0030TRPBF IRLML2803TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at TA=25C 5.3 A 1.2 A
Drain-Source On-Resistance (RDS(on)) max 27 mOhm at VGS=4.5V —
Gate-Source Threshold Voltage (VGS(th)) Logic-level (5 V optimized) [DATA_NEEDED: typical VGS(th)]
Total Gate Charge (Qg) 3.6 nC typical —
Power Dissipation (PD) at TA=25C 1.3 W 540 mW
Rentang Suhu Kerja -55C to +150C -55C to +150C (TJ)
Paket Micro3 / SOT-23 (3-pin) Micro3 / SOT-23 (3-pin)
Tipe Mounting Surface Mount Surface Mount
Technology IR HEXFET Power MOSFET IR MOSFET Generation V
Level MSL 1 (unlimited floor life per JEDEC J-STD-020) 1
Soldering Wave-solder capable —
Qualification JEDEC standard —
Status RoHS Compliant —
Manufacturer — Infineon Technologies
Part Number — IRLML2803TRPBF
Tipe Transistor — N-Channel MOSFET
On-Resistance RDS(on) at VGS=4.5V — 250 mOhm maximum
Gate Charge (Qg) — 3.3 nC typical
Gate Drive Level — Logic-level (driven from 3.3V / 5V)
RoHS Compliance — Compliant, Halogen-Free

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