IRLML0030TRPBF vs IRLML2803TRPBF 比較

詳細並排比較 IRLML0030TRPBF 由 Infineon 與 IRLML2803TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRLML0030TRPBF IRLML0030TRPBF - 30V N-Channel HEXFET MOSFET | Infineon

IRLML0030TRPBF - 30V N-Channel HEXFET MOSFET | Infineon

IRLML0030TRPBF ✓ 啟用中
Infineon
IRLML2803TRPBF IRLML2803TRPBF - 30V N-Ch MOSFET, 1.2A, SOT-23 | Infineon

IRLML2803TRPBF - 30V N-Ch MOSFET, 1.2A, SOT-23 | Infineon

IRLML2803TRPBF ✓ 啟用中

規格比較

參數 IRLML0030TRPBF IRLML2803TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel —
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at TA=25C 5.3 A 1.2 A
Drain-Source On-Resistance (RDS(on)) max 27 mOhm at VGS=4.5V —
Gate-Source Threshold Voltage (VGS(th)) Logic-level (5 V optimized) [DATA_NEEDED: typical VGS(th)]
Total Gate Charge (Qg) 3.6 nC typical —
Power Dissipation (PD) at TA=25C 1.3 W 540 mW
工作溫度範圍 -55C to +150C -55C to +150C (TJ)
封裝 Micro3 / SOT-23 (3-pin) Micro3 / SOT-23 (3-pin)
安裝類型 Surface Mount Surface Mount
Technology IR HEXFET Power MOSFET IR MOSFET Generation V
MSL 等級 1 (unlimited floor life per JEDEC J-STD-020) 1
Soldering Wave-solder capable —
Qualification JEDEC standard —
RoHS 狀態 Compliant —
Manufacturer — Infineon Technologies
Part Number — IRLML2803TRPBF
電晶體類型 — N-Channel MOSFET
On-Resistance RDS(on) at VGS=4.5V — 250 mOhm maximum
Gate Charge (Qg) — 3.3 nC typical
Gate Drive Level — Logic-level (driven from 3.3V / 5V)
RoHS Compliance — Compliant, Halogen-Free

資料表與資源

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