ISZ173N15NM6ATMA1 vs ISZ072N06NM6ATMA1 Perbandingan
Perbandingan bersamaan detil ISZ173N15NM6ATMA1 dari Infineon dan ISZ072N06NM6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | ISZ173N15NM6ATMA1 | ISZ072N06NM6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 150V | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 150 V | 60 V |
| Continuous Drain Current (ID) at Ta | 7.9 A | — |
| Continuous Drain Current (ID) at Tc | 48 A | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Power Dissipation (PD) at Tc | 94 W | — |
| Technology | OptiMOS 6 trench-gate MOSFET | OptiMOS 6 trench MOSFET |
| Paket | PG-TSDSON-8 FL | PG-TSDSON-8-34 (TSDSON-8 FL) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Operating Mode | Enhancement Mode | — |
| Application | Hard and soft switching, high/low frequency | — |
| Lead-Free | Yes | — |
| Status RoHS | Compliant | Compliant |
| Tape & Reel Quantity | 5000 | — |
| Product Family | — | OptiMOS 6 60V |
| Polarity / Channel Type | — | N-Channel |
| Continuous Drain Current (ID, Tc=25°C) | — | 57 A |
| Continuous Drain Current (ID, Ta) | — | 12.7 A |
| RDS(on) max @ VGS=10V | — | 7.2 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 3.3 V (typ) |
| Dissipasi Listrik (TC=25°C) | — | 50 W |
| Power Dissipation (Ta) | — | 2.5 W |
| Rentang Suhu Kerja | — | -55C to +175C ( Tj max 175C ) |
| Level MSL | — | 1 |