ISZ173N15NM6ATMA1 vs ISZ072N06NM6ATMA1 比較
詳細並排比較 ISZ173N15NM6ATMA1 由 Infineon 與 ISZ072N06NM6ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | ISZ173N15NM6ATMA1 | ISZ072N06NM6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 150V | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 150 V | 60 V |
| Continuous Drain Current (ID) at Ta | 7.9 A | — |
| Continuous Drain Current (ID) at Tc | 48 A | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Power Dissipation (PD) at Tc | 94 W | — |
| Technology | OptiMOS 6 trench-gate MOSFET | OptiMOS 6 trench MOSFET |
| 封裝 | PG-TSDSON-8 FL | PG-TSDSON-8-34 (TSDSON-8 FL) |
| 安裝類型 | Surface Mount | Surface Mount |
| Operating Mode | Enhancement Mode | — |
| Application | Hard and soft switching, high/low frequency | — |
| Lead-Free | Yes | — |
| RoHS 狀態 | Compliant | Compliant |
| Tape & Reel Quantity | 5000 | — |
| Product Family | — | OptiMOS 6 60V |
| Polarity / Channel Type | — | N-Channel |
| Continuous Drain Current (ID, Tc=25°C) | — | 57 A |
| Continuous Drain Current (ID, Ta) | — | 12.7 A |
| RDS(on) max @ VGS=10V | — | 7.2 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 3.3 V (typ) |
| 功率耗散 (TC=25°C) | — | 50 W |
| Power Dissipation (Ta) | — | 2.5 W |
| 工作溫度範圍 | — | -55C to +175C ( Tj max 175C ) |
| MSL 等級 | — | 1 |