ISZ173N15NM6ATMA1 vs ISZ072N06NM6ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISZ173N15NM6ATMA1 disebabkan oleh Infineon dan ISZ072N06NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
ISZ173N15NM6ATMA1 ISZ173N15NM6ATMA1 - 150V OptiMOS 6 N-MOSFET 48A | Infineon

ISZ173N15NM6ATMA1 - 150V OptiMOS 6 N-MOSFET 48A | Infineon

ISZ173N15NM6ATMA1 ✓ Aktif
Infineon
ISZ072N06NM6ATMA1 ISZ072N06NM6ATMA1 - 60V 57A OptiMOS 6 N-MOSFET | Infineon

ISZ072N06NM6ATMA1 - 60V 57A OptiMOS 6 N-MOSFET | Infineon

ISZ072N06NM6ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr ISZ173N15NM6ATMA1 ISZ072N06NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 6 150V —
FET Type N-Channel —
Drain-Source Voltage (VDS) 150 V 60 V
Continuous Drain Current (ID) at Ta 7.9 A —
Continuous Drain Current (ID) at Tc 48 A —
Power Dissipation (PD) at Ta 2.5 W —
Power Dissipation (PD) at Tc 94 W —
Technology OptiMOS 6 trench-gate MOSFET OptiMOS 6 trench MOSFET
Kemasan PG-TSDSON-8 FL PG-TSDSON-8-34 (TSDSON-8 FL)
Jenis Pemasangan Surface Mount Surface Mount
Operating Mode Enhancement Mode —
Application Hard and soft switching, high/low frequency —
Lead-Free Yes —
Status RoHS Compliant Compliant
Tape & Reel Quantity 5000 —
Product Family — OptiMOS 6 60V
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID, Tc=25°C) — 57 A
Continuous Drain Current (ID, Ta) — 12.7 A
RDS(on) max @ VGS=10V — 7.2 mΩ
Gate Threshold Voltage (VGS(th)) — 3.3 V (typ)
Pembuangan Kuasa (TC=25°C) — 50 W
Power Dissipation (Ta) — 2.5 W
Gambaran Suhu Operasi — -55C to +175C ( Tj max 175C )
Aras MSL — 1

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