ISZ173N15NM6ATMA1 vs ISZ072N06NM6ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng ISZ173N15NM6ATMA1 sa pamamagitan ng Infineon at ISZ072N06NM6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
ISZ173N15NM6ATMA1 ISZ173N15NM6ATMA1 - 150V OptiMOS 6 N-MOSFET 48A | Infineon

ISZ173N15NM6ATMA1 - 150V OptiMOS 6 N-MOSFET 48A | Infineon

ISZ173N15NM6ATMA1 ✓ Nakahanda
Infineon
ISZ072N06NM6ATMA1 ISZ072N06NM6ATMA1 - 60V 57A OptiMOS 6 N-MOSFET | Infineon

ISZ072N06NM6ATMA1 - 60V 57A OptiMOS 6 N-MOSFET | Infineon

ISZ072N06NM6ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro ISZ173N15NM6ATMA1 ISZ072N06NM6ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 6 150V —
FET Type N-Channel —
Drain-Source Voltage (VDS) 150 V 60 V
Continuous Drain Current (ID) at Ta 7.9 A —
Continuous Drain Current (ID) at Tc 48 A —
Power Dissipation (PD) at Ta 2.5 W —
Power Dissipation (PD) at Tc 94 W —
Technology OptiMOS 6 trench-gate MOSFET OptiMOS 6 trench MOSFET
Packhaging PG-TSDSON-8 FL PG-TSDSON-8-34 (TSDSON-8 FL)
Uri ng Pagpapasok Surface Mount Surface Mount
Operating Mode Enhancement Mode —
Application Hard and soft switching, high/low frequency —
Lead-Free Yes —
Tindminan RoHS Compliant Compliant
Tape & Reel Quantity 5000 —
Product Family — OptiMOS 6 60V
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID, Tc=25°C) — 57 A
Continuous Drain Current (ID, Ta) — 12.7 A
RDS(on) max @ VGS=10V — 7.2 mΩ
Gate Threshold Voltage (VGS(th)) — 3.3 V (typ)
Pwersang Pinahihigpit (TC=25°C) — 50 W
Power Dissipation (Ta) — 2.5 W
Hanay ng Temperature na Operasyon — -55C to +175C ( Tj max 175C )
Level ng MSL — 1

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita