K4A8G165WB-BCPB vs MT41K256M16TW-107 Perbandingan
Perbandingan bersamaan detil K4A8G165WB-BCPB dari Samsung Electronics dan MT41K256M16TW-107 dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4A8G165WB-BCPB | MT41K256M16TW-107 |
|---|---|---|
| Merek | Samsung Electronics | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $14,10 |
| Tipe Memori | DDR4 SDRAM | DDR3L SDRAM |
| Density | 8 Gb | — |
| Organisasi | 512M x 16 | 256M x 16 |
| Laju Data | 2133 Mbps | — |
| Supply Voltage (VDD) | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Suhu Kerja | 0C to +85C | 0C to +95C (commercial :P grade) |
| Paket | 96FBGA (TFBGA) | 96-FBGA (8x14 mm) |
| Number of Terminals | 96 | — |
| Package Shape | Rectangular, bottom terminal position | — |
| Die Generation | 8Gb B-die | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Antarmuka | DDR4 (synchronous, double data rate) | Parallel |
| Bank Groups | DDR4 bank-group architecture | — |
| Status RoHS | Compliant (per Lisleapex listing) | [DATA_NEEDED: RoHS status] |
| Refresh | [DATA_NEEDED: refresh specification] | — |
| Ukuran Memori | — | 4 Gbit |
| Clock Frequency | — | 933 MHz (DDR3L-1866) |
| Access Time | — | 20 ns |
| Tegangan Pemuat | — | 1.35 V |
| Lebar Bus Data | — | 16 bit |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| Write Leveling | — | Yes |
| Dynamic On-Die Termination | — | Yes |
| ZQ Calibration | — | Yes |
| Level MSL | — | [DATA_NEEDED: MSL level] |