K4A8G165WB-BCPB vs MT41K256M16TW-107 比較
詳細並排比較 K4A8G165WB-BCPB 由 Samsung Electronics 與 MT41K256M16TW-107 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4A8G165WB-BCPB | MT41K256M16TW-107 |
|---|---|---|
| 品牌 | Samsung Electronics | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | — | $14.10 |
| 記憶體類型 | DDR4 SDRAM | DDR3L SDRAM |
| Density | 8 Gb | — |
| 組織 | 512M x 16 | 256M x 16 |
| 資料速率 | 2133 Mbps | — |
| Supply Voltage (VDD) | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| 工作溫度 | 0C to +85C | 0C to +95C (commercial :P grade) |
| 封裝 | 96FBGA (TFBGA) | 96-FBGA (8x14 mm) |
| Number of Terminals | 96 | — |
| Package Shape | Rectangular, bottom terminal position | — |
| Die Generation | 8Gb B-die | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 介面 | DDR4 (synchronous, double data rate) | Parallel |
| Bank Groups | DDR4 bank-group architecture | — |
| RoHS 狀態 | Compliant (per Lisleapex listing) | [DATA_NEEDED: RoHS status] |
| Refresh | [DATA_NEEDED: refresh specification] | — |
| 記憶體容量 | — | 4 Gbit |
| Clock Frequency | — | 933 MHz (DDR3L-1866) |
| Access Time | — | 20 ns |
| 供應電壓 | — | 1.35 V |
| 資料匯流排寬度 | — | 16 bit |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| Write Leveling | — | Yes |
| Dynamic On-Die Termination | — | Yes |
| ZQ Calibration | — | Yes |
| MSL 等級 | — | [DATA_NEEDED: MSL level] |