K4A8G165WB-BCPB vs MT41K256M16TW-107 Comparison
Detailed side-by-side comparison of K4A8G165WB-BCPB by Samsung Electronics and MT41K256M16TW-107 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCPB
K4A8G165WB-BCPB - 8Gb DDR4 SDRAM x16 2133Mbps | Samsung
K4A8G165WB-BCPB β Active
Specification Comparison
| Parameter | K4A8G165WB-BCPB | MT41K256M16TW-107 |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.30 | $14.10 |
| Density | 8 Gb | β |
| Organization | 512M x 16 | 256M x 16 |
| Speed Grade | 2133 Mbps (PC4-17000) | β |
| Supply Voltage | 1.2 V (1.14 V to 1.26 V) | 1.35 V |
| Operating Temperature | 0Β°C to 85Β°C | 0C to +95C (commercial :P grade) |
| Package | 96-ball FBGA (TFBGA-96) | 96-FBGA (8x14 mm) |
| Burst Length | 8 (BL8) | β |
| Burst Type | Sequential and Interleave | β |
| CAS Latency | Programmable (e.g., 15, 16, 18) | β |
| Refresh | Auto and Self Refresh | β |
| Number of Terminals | 96 | β |
| Package Code | TFBGA | β |
| Package Shape | RECTANGULAR | β |
| Terminal Position | BOTTOM | β |
| RoHS Status | Compliant | [DATA_NEEDED: RoHS status] |
| Memory Type | β | DDR3L SDRAM |
| Memory Size | β | 4 Gbit |
| Interface | β | Parallel |
| Clock Frequency | β | 933 MHz (DDR3L-1866) |
| Access Time | β | 20 ns |
| Data Bus Width | β | 16 bit |
| Mounting Type | β | Surface Mount |
| Auto Self-Refresh | β | Yes |
| Auto Precharge | β | Yes |
| Asynchronous Reset | β | Yes |
| Data Mask | β | Yes |
| Write Leveling | β | Yes |
| Dynamic On-Die Termination | β | Yes |
| ZQ Calibration | β | Yes |
| MSL Level | β | [DATA_NEEDED: MSL level] |