K4A8G165WB-BCPB vs MT41K256M16TW-107 Comparison
Detailed side-by-side comparison of K4A8G165WB-BCPB by Samsung Electronics and MT41K256M16TW-107 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCPB - 8Gb DDR4 SDRAM 2133Mbps x16 | Samsung
K4A8G165WB-BCPB ✓ Active
Specification Comparison
| Parameter | K4A8G165WB-BCPB | MT41K256M16TW-107 |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Unit Price (USD) | — | $14.10 |
| Memory Type | DDR4 SDRAM | DDR3L SDRAM |
| Density | 8 Gb | — |
| Organization | 512M x 16 | 256M x 16 |
| Data Rate | 2133 Mbps | — |
| Supply Voltage (VDD) | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Operating Temperature | 0C to +85C | 0C to +95C (commercial :P grade) |
| Package | 96FBGA (TFBGA) | 96-FBGA (8x14 mm) |
| Number of Terminals | 96 | — |
| Package Shape | Rectangular, bottom terminal position | — |
| Die Generation | 8Gb B-die | — |
| Mounting Type | Surface Mount | Surface Mount |
| Interface | DDR4 (synchronous, double data rate) | Parallel |
| Bank Groups | DDR4 bank-group architecture | — |
| RoHS Status | Compliant (per Lisleapex listing) | [DATA_NEEDED: RoHS status] |
| Refresh | [DATA_NEEDED: refresh specification] | — |
| Memory Size | — | 4 Gbit |
| Clock Frequency | — | 933 MHz (DDR3L-1866) |
| Access Time | — | 20 ns |
| Supply Voltage | — | 1.35 V |
| Data Bus Width | — | 16 bit |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| Write Leveling | — | Yes |
| Dynamic On-Die Termination | — | Yes |
| ZQ Calibration | — | Yes |
| MSL Level | — | [DATA_NEEDED: MSL level] |