K4A8G165WB-BCPB vs MT41K256M16TW-107 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G165WB-BCPB disebabkan oleh Samsung Electronics dan MT41K256M16TW-107 disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4A8G165WB-BCPB | MT41K256M16TW-107 |
|---|---|---|
| Merek | Samsung Electronics | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $14.10 |
| Jenis Ingatan | DDR4 SDRAM | DDR3L SDRAM |
| Density | 8 Gb | — |
| Organisasi | 512M x 16 | 256M x 16 |
| Kadar Data | 2133 Mbps | — |
| Supply Voltage (VDD) | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Suhu Operasi | 0C to +85C | 0C to +95C (commercial :P grade) |
| Kemasan | 96FBGA (TFBGA) | 96-FBGA (8x14 mm) |
| Number of Terminals | 96 | — |
| Package Shape | Rectangular, bottom terminal position | — |
| Die Generation | 8Gb B-die | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Antaramuka | DDR4 (synchronous, double data rate) | Parallel |
| Bank Groups | DDR4 bank-group architecture | — |
| Status RoHS | Compliant (per Lisleapex listing) | [DATA_NEEDED: RoHS status] |
| Refresh | [DATA_NEEDED: refresh specification] | — |
| Saiz Ingatan | — | 4 Gbit |
| Clock Frequency | — | 933 MHz (DDR3L-1866) |
| Access Time | — | 20 ns |
| Tegangan Pemberi Arus | — | 1.35 V |
| Lebar Bus Data | — | 16 bit |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| Write Leveling | — | Yes |
| Dynamic On-Die Termination | — | Yes |
| ZQ Calibration | — | Yes |
| Aras MSL | — | [DATA_NEEDED: MSL level] |