K4A8G165WB-BCPB vs MT41K256M16TW-107 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G165WB-BCPB sa pamamagitan ng Samsung Electronics at MT41K256M16TW-107 sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A8G165WB-BCPB - 8Gb DDR4 SDRAM 2133Mbps x16 | Samsung
K4A8G165WB-BCPB ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | K4A8G165WB-BCPB | MT41K256M16TW-107 |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | — | $14.10 |
| Uri ng Memory | DDR4 SDRAM | DDR3L SDRAM |
| Density | 8 Gb | — |
| Organisasyon | 512M x 16 | 256M x 16 |
| Rate ng Data | 2133 Mbps | — |
| Supply Voltage (VDD) | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Temperature na Operasyon | 0C to +85C | 0C to +95C (commercial :P grade) |
| Packhaging | 96FBGA (TFBGA) | 96-FBGA (8x14 mm) |
| Number of Terminals | 96 | — |
| Package Shape | Rectangular, bottom terminal position | — |
| Die Generation | 8Gb B-die | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Interface | DDR4 (synchronous, double data rate) | Parallel |
| Bank Groups | DDR4 bank-group architecture | — |
| Tindminan RoHS | Compliant (per Lisleapex listing) | [DATA_NEEDED: RoHS status] |
| Refresh | [DATA_NEEDED: refresh specification] | — |
| Laki ng Memory | — | 4 Gbit |
| Clock Frequency | — | 933 MHz (DDR3L-1866) |
| Access Time | — | 20 ns |
| Volte ng Pagbibigay | — | 1.35 V |
| Width ng Data Bus | — | 16 bit |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| Write Leveling | — | Yes |
| Dynamic On-Die Termination | — | Yes |
| ZQ Calibration | — | Yes |
| Level ng MSL | — | [DATA_NEEDED: MSL level] |