K4A8G165WB-BCWE vs MT40A512M16LY-075:E Perbandingan
Perbandingan bersamaan detil K4A8G165WB-BCWE dari Samsung Electronics dan MT40A512M16LY-075:E dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4A8G165WB-BCWE - 8Gb DDR4 3200Mbps 96FBGA DRAM | Samsung
K4A8G165WB-BCWE ✓ AktifMicron Technology
MT40A512M16LY-075:E - 8Gb DDR4 SDRAM 2666MT/s | Micron
MT40A512M16LY-075:E ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K4A8G165WB-BCWE | MT40A512M16LY-075:E |
|---|---|---|
| Merek | Samsung Electronics | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | In Stock | — |
| Harga Unit (USD) | $6,25 | — |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Ukuran Memori | 8 Gb | 8 Gbit (512M x 16) |
| Memory Organization | 512M x 16 | — |
| Laju Data | 3200 Mbps/pin | 2666 MT/s |
| Tegangan Pemuat | 1.2 V | — |
| Access Time | 19 ns | — |
| Antarmuka | Parallel | Parallel |
| Paket | 96FBGA | 96-FBGA (7.5x13.5mm) |
| Suhu Kerja | 0C to +85C | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Memory Format | DRAM (volatile) | — |
| Technology | DDR4 SDRAM B-die | — |
| Prefetch | 8n | — |
| Refresh | Self-refresh supported | — |
| Termination | On-die termination (ODT) | — |
| Status RoHS | [DATA_NEEDED: RoHS compliance statement] | — |
| Level MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Clock Frequency | — | 1.33 GHz |
| Latensi CAS | — | 19 |
| Supply Voltage (VDD/VDDQ) | — | 1.2V ±60mV |
| VPP Supply | — | 2.5V (-125mV, +250mV) |
| Rentang Suhu Kerja | — | 0°C to +95°C |
| Refresh Time | — | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C |
| Internal Banks (x16) | — | 8 banks (4 groups of 2) |
| I/O Type | — | 1.2V pseudo open-drain |
| RoHS | — | Compliant |