K4A8G165WB-BCWE vs MT40A512M16LY-075:E 比較
詳細並排比較 K4A8G165WB-BCWE 由 Samsung Electronics 與 MT40A512M16LY-075:E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4A8G165WB-BCWE | MT40A512M16LY-075:E |
|---|---|---|
| 品牌 | Samsung Electronics | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | In Stock | — |
| 單價 (USD) | $6.25 | — |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| 記憶體容量 | 8 Gb | 8 Gbit (512M x 16) |
| Memory Organization | 512M x 16 | — |
| 資料速率 | 3200 Mbps/pin | 2666 MT/s |
| 供應電壓 | 1.2 V | — |
| Access Time | 19 ns | — |
| 介面 | Parallel | Parallel |
| 封裝 | 96FBGA | 96-FBGA (7.5x13.5mm) |
| 工作溫度 | 0C to +85C | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Memory Format | DRAM (volatile) | — |
| Technology | DDR4 SDRAM B-die | — |
| Prefetch | 8n | — |
| Refresh | Self-refresh supported | — |
| Termination | On-die termination (ODT) | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS compliance statement] | — |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | — |
| Clock Frequency | — | 1.33 GHz |
| CAS 延遲 | — | 19 |
| Supply Voltage (VDD/VDDQ) | — | 1.2V ±60mV |
| VPP Supply | — | 2.5V (-125mV, +250mV) |
| 工作溫度範圍 | — | 0°C to +95°C |
| Refresh Time | — | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C |
| Internal Banks (x16) | — | 8 banks (4 groups of 2) |
| I/O Type | — | 1.2V pseudo open-drain |
| RoHS | — | Compliant |