K4A8G165WC-BCRC vs K4A8G165WC-BCPB Perbandingan
Perbandingan bersamaan detil K4A8G165WC-BCRC dari Samsung Electro-Mechanics dan K4A8G165WC-BCPB dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electro-Mechanics
K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WC-BCRC ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | K4A8G165WC-BCRC | K4A8G165WC-BCPB |
|---|---|---|
| Merek | Samsung Electro-Mechanics | Samsung Electronics |
| Kategori | EEPROM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | In Stock | — |
| Harga Unit (USD) | $19,69 | — |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM (volatile DRAM) |
| Ukuran Memori | 8 Gbit | 8 Gb |
| Organisasi | 512M x 16 | — |
| Laju Data | 2400 Mbps | DDR4-2133 (2133 Mbps/pin) |
| Clock Frequency | 1333 MHz | — |
| Tegangan Pemuat | 1.2 V (1.14 V to 1.26 V) | 1.2 V |
| Antarmuka | Parallel, 16-bit DDR | DDR4 (16-bit data bus) |
| Standby Current (Idle) | 2 mA | — |
| Operating Current | 64 mA | — |
| Suhu Kerja | 0 C to +95 C | 0C to +95C |
| Paket | 96-FBGA (TFBGA) | 96-ball FBGA (TFBGA) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Fitur | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Die Generation | C-die | C-die (1Y nm class) |
| Memory Format | DRAM | — |
| Status RoHS | Compliant | Compliant |
| Memory Organization | — | 512M x 16 |
| Operating Voltage Range | — | 1.14 V to 1.26 V |
| Termination | — | On-die termination (ODT), dynamic |
| Level MSL | — | [DATA_NEEDED: MSL Level] |
| Standard | — | JEDEC DDR4 SDRAM |