K4A8G165WC-BCWE vs AS4C512M16D4A-62BCNTR Perbandingan
Perbandingan bersamaan detil K4A8G165WC-BCWE dari Samsung Electronics dan AS4C512M16D4A-62BCNTR dari Alliance Memory. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4A8G165WC-BCWE - 8Gb DDR4-3200 SDRAM | Samsung | 96FBGA
K4A8G165WC-BCWE ✓ AktifAlliance Memory
AS4C512M16D4A-62BCNTR - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4A-62BCNTR ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K4A8G165WC-BCWE | AS4C512M16D4A-62BCNTR |
|---|---|---|
| Merek | Samsung Electronics | Alliance Memory |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $38,00 | — |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organisasi | 512M x 16 | — |
| Laju Data | 3200 Mbps | 3200 MT/s |
| Supply Voltage (VDD) | 1.2 V | — |
| VPP Voltage | 2.5 V | — |
| Rentang Suhu Kerja | 0°C to +95°C | — |
| Paket | 96-FBGA | 96-FBGA (7.5x13 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | 18 ns |
| Burst Length | 8 (BL8) / 4 (BC4) | — |
| Number of Banks | 16 | — |
| Row Address Bits | 16 | — |
| Column Address Bits | 10 | — |
| Antarmuka | Differential (CK, /CK) | POD (Pseudo Open Drain) |
| Status RoHS | Compliant | — |
| JEDEC Standard | JEDEC DDR4 | — |
| Ukuran Memori | — | 8 Gbit (512M x 16) |
| Tegangan Pemuat | — | 1.14V ~ 1.26V (nominal 1.2V) |
| Clock Rate | — | 1600 MHz (DDR4-3200) |
| Suhu Kerja | — | 0°C to +95°C (Commercial) |
| Refresh | — | Auto-refresh and self-refresh |
| RoHS | — | Compliant |
| Moisture Sensitivity Level | — | 3 (168 Hours) |
| Write Cycle Time - Word, Page | — | 15 ns |
| Standard Pack | — | 1500/reel (Tape & Reel) |