K4A8G165WC-BCWE vs AS4C512M16D4A-62BCNTR Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G165WC-BCWE sa pamamagitan ng Samsung Electronics at AS4C512M16D4A-62BCNTR sa pamamagitan ng Alliance Memory. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A8G165WC-BCWE - 8Gb DDR4-3200 SDRAM | Samsung | 96FBGA
K4A8G165WC-BCWE ✓ NakahandaAlliance Memory
AS4C512M16D4A-62BCNTR - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4A-62BCNTR ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A8G165WC-BCWE | AS4C512M16D4A-62BCNTR |
|---|---|---|
| Brand | Samsung Electronics | Alliance Memory |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | $38.00 | — |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organisasyon | 512M x 16 | — |
| Rate ng Data | 3200 Mbps | 3200 MT/s |
| Supply Voltage (VDD) | 1.2 V | — |
| VPP Voltage | 2.5 V | — |
| Hanay ng Temperature na Operasyon | 0°C to +95°C | — |
| Packhaging | 96-FBGA | 96-FBGA (7.5x13 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Latensya ng CAS | [DATA_NEEDED: CAS Latency] | 18 ns |
| Burst Length | 8 (BL8) / 4 (BC4) | — |
| Number of Banks | 16 | — |
| Row Address Bits | 16 | — |
| Column Address Bits | 10 | — |
| Interface | Differential (CK, /CK) | POD (Pseudo Open Drain) |
| Tindminan RoHS | Compliant | — |
| JEDEC Standard | JEDEC DDR4 | — |
| Laki ng Memory | — | 8 Gbit (512M x 16) |
| Volte ng Pagbibigay | — | 1.14V ~ 1.26V (nominal 1.2V) |
| Clock Rate | — | 1600 MHz (DDR4-3200) |
| Temperature na Operasyon | — | 0°C to +95°C (Commercial) |
| Refresh | — | Auto-refresh and self-refresh |
| RoHS | — | Compliant |
| Moisture Sensitivity Level | — | 3 (168 Hours) |
| Write Cycle Time - Word, Page | — | 15 ns |
| Standard Pack | — | 1500/reel (Tape & Reel) |