K4A8G165WC-BCWE vs AS4C512M16D4A-62BCNTR Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G165WC-BCWE disebabkan oleh Samsung Electronics dan AS4C512M16D4A-62BCNTR disebabkan oleh Alliance Memory. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A8G165WC-BCWE - 8Gb DDR4-3200 SDRAM | Samsung | 96FBGA
K4A8G165WC-BCWE ✓ AktifAlliance Memory
AS4C512M16D4A-62BCNTR - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4A-62BCNTR ✓ AktifPengandingan Spesifikasi
| Parametr | K4A8G165WC-BCWE | AS4C512M16D4A-62BCNTR |
|---|---|---|
| Merek | Samsung Electronics | Alliance Memory |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $38.00 | — |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organisasi | 512M x 16 | — |
| Kadar Data | 3200 Mbps | 3200 MT/s |
| Supply Voltage (VDD) | 1.2 V | — |
| VPP Voltage | 2.5 V | — |
| Gambaran Suhu Operasi | 0°C to +95°C | — |
| Kemasan | 96-FBGA | 96-FBGA (7.5x13 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | 18 ns |
| Burst Length | 8 (BL8) / 4 (BC4) | — |
| Number of Banks | 16 | — |
| Row Address Bits | 16 | — |
| Column Address Bits | 10 | — |
| Antaramuka | Differential (CK, /CK) | POD (Pseudo Open Drain) |
| Status RoHS | Compliant | — |
| JEDEC Standard | JEDEC DDR4 | — |
| Saiz Ingatan | — | 8 Gbit (512M x 16) |
| Tegangan Pemberi Arus | — | 1.14V ~ 1.26V (nominal 1.2V) |
| Clock Rate | — | 1600 MHz (DDR4-3200) |
| Suhu Operasi | — | 0°C to +95°C (Commercial) |
| Refresh | — | Auto-refresh and self-refresh |
| RoHS | — | Compliant |
| Moisture Sensitivity Level | — | 3 (168 Hours) |
| Write Cycle Time - Word, Page | — | 15 ns |
| Standard Pack | — | 1500/reel (Tape & Reel) |