K4B4G1646D-BCK0 vs MT41K256M16TW-107 Perbandingan
Perbandingan bersamaan detil K4B4G1646D-BCK0 dari Samsung Electronics dan MT41K256M16TW-107 dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4B4G1646D-BCK0 | MT41K256M16TW-107 |
|---|---|---|
| Merek | Samsung Electronics | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $14,10 |
| Tipe Memori | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | — |
| Organisasi | 256M x 16 | 256M x 16 |
| Number of Banks | 8 | — |
| Laju Data | 1600 Mbps per pin | — |
| Clock Frequency | 800 MHz | 933 MHz (DDR3L-1866) |
| Supply Voltage (VDD) | 1.35V (1.283V to 1.45V) | — |
| Supply Voltage (VDDQ) | 1.35V (1.283V to 1.45V) | — |
| Latensi CAS | 11 (programmable) | — |
| Burst Length | 8, 4 | — |
| Paket | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) | 96-FBGA (8x14 mm) |
| Suhu Kerja | 0°C to 95°C (Tc) | 0C to +95C (commercial :P grade) |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Bebas Halogen | Yes | — |
| Ukuran Memori | — | 4 Gbit |
| Antarmuka | — | Parallel |
| Access Time | — | 20 ns |
| Tegangan Pemuat | — | 1.35 V |
| Lebar Bus Data | — | 16 bit |
| Tipe Mounting | — | Surface Mount |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| Write Leveling | — | Yes |
| Dynamic On-Die Termination | — | Yes |
| ZQ Calibration | — | Yes |
| Status RoHS | — | [DATA_NEEDED: RoHS status] |
| Level MSL | — | [DATA_NEEDED: MSL level] |