K4B4G1646D-BCK0 vs MT41K256M16TW-107 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646D-BCK0 disebabkan oleh Samsung Electronics dan MT41K256M16TW-107 disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4B4G1646D-BCK0 | MT41K256M16TW-107 |
|---|---|---|
| Merek | Samsung Electronics | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $14.10 |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | — |
| Organisasi | 256M x 16 | 256M x 16 |
| Number of Banks | 8 | — |
| Kadar Data | 1600 Mbps per pin | — |
| Clock Frequency | 800 MHz | 933 MHz (DDR3L-1866) |
| Supply Voltage (VDD) | 1.35V (1.283V to 1.45V) | — |
| Supply Voltage (VDDQ) | 1.35V (1.283V to 1.45V) | — |
| Latensi CAS | 11 (programmable) | — |
| Burst Length | 8, 4 | — |
| Kemasan | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) | 96-FBGA (8x14 mm) |
| Suhu Operasi | 0°C to 95°C (Tc) | 0C to +95C (commercial :P grade) |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Boson Bebas | Yes | — |
| Saiz Ingatan | — | 4 Gbit |
| Antaramuka | — | Parallel |
| Access Time | — | 20 ns |
| Tegangan Pemberi Arus | — | 1.35 V |
| Lebar Bus Data | — | 16 bit |
| Jenis Pemasangan | — | Surface Mount |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| Write Leveling | — | Yes |
| Dynamic On-Die Termination | — | Yes |
| ZQ Calibration | — | Yes |
| Status RoHS | — | [DATA_NEEDED: RoHS status] |
| Aras MSL | — | [DATA_NEEDED: MSL level] |