K4B4G1646D-BCK0 vs MT41K256M16TW-107 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4B4G1646D-BCK0 sa pamamagitan ng Samsung Electronics at MT41K256M16TW-107 sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | K4B4G1646D-BCK0 | MT41K256M16TW-107 |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | — | $14.10 |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | — |
| Organisasyon | 256M x 16 | 256M x 16 |
| Number of Banks | 8 | — |
| Rate ng Data | 1600 Mbps per pin | — |
| Clock Frequency | 800 MHz | 933 MHz (DDR3L-1866) |
| Supply Voltage (VDD) | 1.35V (1.283V to 1.45V) | — |
| Supply Voltage (VDDQ) | 1.35V (1.283V to 1.45V) | — |
| Latensya ng CAS | 11 (programmable) | — |
| Burst Length | 8, 4 | — |
| Packhaging | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) | 96-FBGA (8x14 mm) |
| Temperature na Operasyon | 0°C to 95°C (Tc) | 0C to +95C (commercial :P grade) |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Wala sa Halogen | Yes | — |
| Laki ng Memory | — | 4 Gbit |
| Interface | — | Parallel |
| Access Time | — | 20 ns |
| Volte ng Pagbibigay | — | 1.35 V |
| Width ng Data Bus | — | 16 bit |
| Uri ng Pagpapasok | — | Surface Mount |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| Write Leveling | — | Yes |
| Dynamic On-Die Termination | — | Yes |
| ZQ Calibration | — | Yes |
| Tindminan RoHS | — | [DATA_NEEDED: RoHS status] |
| Level ng MSL | — | [DATA_NEEDED: MSL level] |