K4B4G1646D-BYH9 vs W634GU6RB-11TR Perbandingan
Perbandingan bersamaan detil K4B4G1646D-BYH9 dari Samsung Electronics dan W634GU6RB-11TR dari Winbond. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4B4G1646D-BYH9 - 4Gb DDR3L SDRAM 256Mx16 1333Mbps | Samsung
K4B4G1646D-BYH9 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K4B4G1646D-BYH9 | W634GU6RB-11TR |
|---|---|---|
| Merek | Samsung Electronics | Winbond |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Density | 4 Gb | — |
| Organisasi | 256M x 16 | 256M x 16 |
| Laju Data | 1333 Mbps | 1866 MT/s |
| Tegangan Pemuat | 1.35 V | 1.35V (1.5V compatible) |
| Suhu Kerja | 0 ~ 85 °C | -40°C to +95°C |
| Paket | 96FBGA | 96-VFBGA (7.5x13 mm) |
| Number of Banks | 8 | — |
| Latensi CAS | Programmable | 13 |
| Write Latency | Programmable | — |
| On-Die Termination | Yes | — |
| Internal Calibration | Yes | — |
| Lead-Free | Yes | — |
| Bebas Halogen | Yes | — |
| RoHS Compliant | Yes | — |
| Die Version | D-die | — |
| Tipe Memori | — | DDR3L SDRAM |
| Ukuran Memori | — | 4Gbit (256M x 16) |
| Clock Frequency | — | 933 MHz |
| Access Time | — | 20 ns |
| Antarmuka | — | Parallel |
| Tipe Mounting | — | Surface Mount |
| Status RoHS | — | Compliant |
| Bebas Halogen | — | Yes |
| Auto Self-Refresh | — | Yes |
| Write Leveling | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic ODT | — | Yes |