K4S561633F-ZL75 vs K4S561633FZN75 Perbandingan

Perbandingan bersamaan detil K4S561633F-ZL75 dari Samsung Electronics dan K4S561633FZN75 dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Samsung Electronics
K4S561633F-ZL75 K4S561633F-ZL75 - 256Mb Mobile SDRAM, 4x16Mx16, 133MHz, 54-BGA

K4S561633F-ZL75 - 256Mb Mobile SDRAM, 4x16Mx16, 133MHz, 54-BGA

K4S561633F-ZL75 Nrnd

Perbandingan Spesifikasi

Parameter Umum K4S561633F-ZL75 K4S561633FZN75
Merek Samsung Electronics Samsung Electronics
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup NRND NRND
Tipe Memori Synchronous DRAM (Mobile SDRAM) Mobile SDRAM (Synchronous DRAM)
Density 256 Mbit (268,435,456 bits) 256 Mbit (268,435,456 bits)
Organisasi 4 banks x 4,196,304 words x 16 bits (4M x 16 x 4 banks) 4 banks x 4,196,304 words x 16 bits
Operating Frequency (max) 133 MHz —
Clock Access Time 5.4 ns —
Speed Grade ZL75 (7.5 ns / CAS Latency 3, 133 MHz) —
Supply Voltage (VDD) 3.3 V —
I/O Standard LVCMOS-compatible —
Number of Banks 4 —
Burst Length 1, 2, 4, 8, Full Page 1, 2, 4, 8, full page (programmable)
Burst Type Sequential or Interleave —
Latensi CAS Programmable, 2 or 3 Programmable, 2 or 3
Paket 54-ball FBGA (54-BOC) / TFBGA 54-ball FBGA (54BOC)
Tipe Mounting Surface Mount —
RoHS / Lead-Free Pb-Free (per -L75 suffix) —
Suhu Kerja [DATA_NEEDED: operating temperature grade] Commercial grade (per -ZN75 suffix)
Clock Frequency — 133 MHz
Laju Data — PC133 (SDRAM)
Supply Voltage (VDD/VDDQ) — 3.0 V (typ); 2.7 V-3.3 V range
Antarmuka — LVCMOS
Process Technology — Samsung high-performance CMOS
Refresh — Auto-Refresh and Self-Refresh
Power Modes — Power-Down mode, Partial Array Self-Refresh (PASR)
Lead-Free / RoHS — Pb-free (lead-free) - per '-ZN' suffix
Bank Architecture — 4 internal banks
Row Address — A0-A12 (13-bit)
Data Width — x16 (DQ0-DQ15)

Spek dan Sumber

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