K4S561633F-ZL75 vs K4S561633FZN75 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4S561633F-ZL75 disebabkan oleh Samsung Electronics dan K4S561633FZN75 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4S561633F-ZL75 - 256Mb Mobile SDRAM, 4x16Mx16, 133MHz, 54-BGA
K4S561633F-ZL75 NrndSamsung Electronics
K4S561633FZN75 - 256Mb Mobile SDRAM 4x16Mx16 133MHz FBGA | Samsung
K4S561633FZN75 NrndPengandingan Spesifikasi
| Parametr | K4S561633F-ZL75 | K4S561633FZN75 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | NRND | NRND |
| Jenis Ingatan | Synchronous DRAM (Mobile SDRAM) | Mobile SDRAM (Synchronous DRAM) |
| Density | 256 Mbit (268,435,456 bits) | 256 Mbit (268,435,456 bits) |
| Organisasi | 4 banks x 4,196,304 words x 16 bits (4M x 16 x 4 banks) | 4 banks x 4,196,304 words x 16 bits |
| Operating Frequency (max) | 133 MHz | — |
| Clock Access Time | 5.4 ns | — |
| Speed Grade | ZL75 (7.5 ns / CAS Latency 3, 133 MHz) | — |
| Supply Voltage (VDD) | 3.3 V | — |
| I/O Standard | LVCMOS-compatible | — |
| Number of Banks | 4 | — |
| Burst Length | 1, 2, 4, 8, Full Page | 1, 2, 4, 8, full page (programmable) |
| Burst Type | Sequential or Interleave | — |
| Latensi CAS | Programmable, 2 or 3 | Programmable, 2 or 3 |
| Kemasan | 54-ball FBGA (54-BOC) / TFBGA | 54-ball FBGA (54BOC) |
| Jenis Pemasangan | Surface Mount | — |
| RoHS / Lead-Free | Pb-Free (per -L75 suffix) | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature grade] | Commercial grade (per -ZN75 suffix) |
| Clock Frequency | — | 133 MHz |
| Kadar Data | — | PC133 (SDRAM) |
| Supply Voltage (VDD/VDDQ) | — | 3.0 V (typ); 2.7 V-3.3 V range |
| Antaramuka | — | LVCMOS |
| Process Technology | — | Samsung high-performance CMOS |
| Refresh | — | Auto-Refresh and Self-Refresh |
| Power Modes | — | Power-Down mode, Partial Array Self-Refresh (PASR) |
| Lead-Free / RoHS | — | Pb-free (lead-free) - per '-ZN' suffix |
| Bank Architecture | — | 4 internal banks |
| Row Address | — | A0-A12 (13-bit) |
| Data Width | — | x16 (DQ0-DQ15) |