K4S561633F-ZL75 vs K4S561633FZN75 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4S561633F-ZL75 sa pamamagitan ng Samsung Electronics at K4S561633FZN75 sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4S561633F-ZL75 - 256Mb Mobile SDRAM, 4x16Mx16, 133MHz, 54-BGA
K4S561633F-ZL75 NrndSamsung Electronics
K4S561633FZN75 - 256Mb Mobile SDRAM 4x16Mx16 133MHz FBGA | Samsung
K4S561633FZN75 NrndPagsanggunian na paghahambing
| Parametro | K4S561633F-ZL75 | K4S561633FZN75 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | NRND | NRND |
| Uri ng Memory | Synchronous DRAM (Mobile SDRAM) | Mobile SDRAM (Synchronous DRAM) |
| Density | 256 Mbit (268,435,456 bits) | 256 Mbit (268,435,456 bits) |
| Organisasyon | 4 banks x 4,196,304 words x 16 bits (4M x 16 x 4 banks) | 4 banks x 4,196,304 words x 16 bits |
| Operating Frequency (max) | 133 MHz | — |
| Clock Access Time | 5.4 ns | — |
| Speed Grade | ZL75 (7.5 ns / CAS Latency 3, 133 MHz) | — |
| Supply Voltage (VDD) | 3.3 V | — |
| I/O Standard | LVCMOS-compatible | — |
| Number of Banks | 4 | — |
| Burst Length | 1, 2, 4, 8, Full Page | 1, 2, 4, 8, full page (programmable) |
| Burst Type | Sequential or Interleave | — |
| Latensya ng CAS | Programmable, 2 or 3 | Programmable, 2 or 3 |
| Packhaging | 54-ball FBGA (54-BOC) / TFBGA | 54-ball FBGA (54BOC) |
| Uri ng Pagpapasok | Surface Mount | — |
| RoHS / Lead-Free | Pb-Free (per -L75 suffix) | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature grade] | Commercial grade (per -ZN75 suffix) |
| Clock Frequency | — | 133 MHz |
| Rate ng Data | — | PC133 (SDRAM) |
| Supply Voltage (VDD/VDDQ) | — | 3.0 V (typ); 2.7 V-3.3 V range |
| Interface | — | LVCMOS |
| Process Technology | — | Samsung high-performance CMOS |
| Refresh | — | Auto-Refresh and Self-Refresh |
| Power Modes | — | Power-Down mode, Partial Array Self-Refresh (PASR) |
| Lead-Free / RoHS | — | Pb-free (lead-free) - per '-ZN' suffix |
| Bank Architecture | — | 4 internal banks |
| Row Address | — | A0-A12 (13-bit) |
| Data Width | — | x16 (DQ0-DQ15) |