K4S561633F-ZL75 vs K4S561633FZN75 比較
詳細並排比較 K4S561633F-ZL75 由 Samsung Electronics 與 K4S561633FZN75 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K4S561633F-ZL75 - 256Mb Mobile SDRAM, 4x16Mx16, 133MHz, 54-BGA
K4S561633F-ZL75 NrndSamsung Electronics
K4S561633FZN75 - 256Mb Mobile SDRAM 4x16Mx16 133MHz FBGA | Samsung
K4S561633FZN75 Nrnd規格比較
| 參數 | K4S561633F-ZL75 | K4S561633FZN75 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | NRND | NRND |
| 記憶體類型 | Synchronous DRAM (Mobile SDRAM) | Mobile SDRAM (Synchronous DRAM) |
| Density | 256 Mbit (268,435,456 bits) | 256 Mbit (268,435,456 bits) |
| 組織 | 4 banks x 4,196,304 words x 16 bits (4M x 16 x 4 banks) | 4 banks x 4,196,304 words x 16 bits |
| Operating Frequency (max) | 133 MHz | — |
| Clock Access Time | 5.4 ns | — |
| Speed Grade | ZL75 (7.5 ns / CAS Latency 3, 133 MHz) | — |
| Supply Voltage (VDD) | 3.3 V | — |
| I/O Standard | LVCMOS-compatible | — |
| Number of Banks | 4 | — |
| Burst Length | 1, 2, 4, 8, Full Page | 1, 2, 4, 8, full page (programmable) |
| Burst Type | Sequential or Interleave | — |
| CAS 延遲 | Programmable, 2 or 3 | Programmable, 2 or 3 |
| 封裝 | 54-ball FBGA (54-BOC) / TFBGA | 54-ball FBGA (54BOC) |
| 安裝類型 | Surface Mount | — |
| RoHS / Lead-Free | Pb-Free (per -L75 suffix) | — |
| 工作溫度 | [DATA_NEEDED: operating temperature grade] | Commercial grade (per -ZN75 suffix) |
| Clock Frequency | — | 133 MHz |
| 資料速率 | — | PC133 (SDRAM) |
| Supply Voltage (VDD/VDDQ) | — | 3.0 V (typ); 2.7 V-3.3 V range |
| 介面 | — | LVCMOS |
| Process Technology | — | Samsung high-performance CMOS |
| Refresh | — | Auto-Refresh and Self-Refresh |
| Power Modes | — | Power-Down mode, Partial Array Self-Refresh (PASR) |
| Lead-Free / RoHS | — | Pb-free (lead-free) - per '-ZN' suffix |
| Bank Architecture | — | 4 internal banks |
| Row Address | — | A0-A12 (13-bit) |
| Data Width | — | x16 (DQ0-DQ15) |