K6X0808C1D-BF70 vs K6X0808C1D-BF55 Perbandingan
Perbandingan bersamaan detil K6X0808C1D-BF70 dari Samsung Electronics dan K6X0808C1D-BF55 dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K6X0808C1D-BF55 - 256Kbit 5V Asynchronous SRAM 55ns | Samsung
K6X0808C1D-BF55 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K6X0808C1D-BF70 | K6X0808C1D-BF55 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Akhir Hidup | Aktif |
| Tipe Memori | Asynchronous SRAM (CMOS) | Asynchronous SRAM |
| Density | 256 Kbit | — |
| Organisasi | 32K x 8 | 32K x 8 |
| Access Time | 70 ns | 55 ns |
| Antarmuka | Parallel | Parallel |
| Technology | CMOS | CMOS |
| Paket | 28-SOP (PDSO28) | 28-SOP |
| Tipe Mounting | Surface Mount | Surface Mount |
| Tegangan Pemuat | [DATA_NEEDED: Supply Voltage] | 5 V |
| Operating Current (active) | [DATA_NEEDED: Operating Current] | — |
| Standby Current (CMOS) | [DATA_NEEDED: Standby Current] | — |
| Suhu Kerja | 0C to +70C (commercial grade, BF suffix) | [DATA_NEEDED: operating temperature range] |
| Control Signals | CE, OE, WE | CE, OE, WE |
| Data Retention | Volatile (battery-backup capable with CE control) | — |
| I/O Type | Tri-state, common I/O (DQ0-DQ7) | — |
| Status RoHS | [DATA_NEEDED: RoHS Status] | unknown |
| Address Bus | A0-A14 (15 address lines) | — |
| Ukuran Memori | — | 256 Kbit |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Operating Current | — | [DATA_NEEDED: operating current] |
| Memory Format | — | SRAM |
| Clock Frequency | — | N/A (asynchronous) |
| Refresh | — | Not required (static memory) |