K6X0808C1D-BF70 vs K6X0808C1D-BF55 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K6X0808C1D-BF70 disebabkan oleh Samsung Electronics dan K6X0808C1D-BF55 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K6X0808C1D-BF55 - 256Kbit 5V Asynchronous SRAM 55ns | Samsung
K6X0808C1D-BF55 ✓ AktifPengandingan Spesifikasi
| Parametr | K6X0808C1D-BF70 | K6X0808C1D-BF55 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Akhir Hidup | Aktif |
| Jenis Ingatan | Asynchronous SRAM (CMOS) | Asynchronous SRAM |
| Density | 256 Kbit | — |
| Organisasi | 32K x 8 | 32K x 8 |
| Access Time | 70 ns | 55 ns |
| Antaramuka | Parallel | Parallel |
| Technology | CMOS | CMOS |
| Kemasan | 28-SOP (PDSO28) | 28-SOP |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Tegangan Pemberi Arus | [DATA_NEEDED: Supply Voltage] | 5 V |
| Operating Current (active) | [DATA_NEEDED: Operating Current] | — |
| Standby Current (CMOS) | [DATA_NEEDED: Standby Current] | — |
| Suhu Operasi | 0C to +70C (commercial grade, BF suffix) | [DATA_NEEDED: operating temperature range] |
| Control Signals | CE, OE, WE | CE, OE, WE |
| Data Retention | Volatile (battery-backup capable with CE control) | — |
| I/O Type | Tri-state, common I/O (DQ0-DQ7) | — |
| Status RoHS | [DATA_NEEDED: RoHS Status] | unknown |
| Address Bus | A0-A14 (15 address lines) | — |
| Saiz Ingatan | — | 256 Kbit |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Operating Current | — | [DATA_NEEDED: operating current] |
| Memory Format | — | SRAM |
| Clock Frequency | — | N/A (asynchronous) |
| Refresh | — | Not required (static memory) |