LMG3422R030RQZT vs LMG3522R030RQSR Perbandingan
Perbandingan bersamaan detil LMG3422R030RQZT dari Texas Instruments dan LMG3522R030RQSR dari Texas Instruments. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Texas Instruments
LMG3422R030RQZT - 600V 30mΩ GaN FET with Integrated Driver | TI
LMG3422R030RQZT ✓ AktifTexas Instruments
LMG3522R030RQSR - 650V 30mΩ GaN FET with Integrated Driver | TI
LMG3522R030RQSR ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | LMG3422R030RQZT | LMG3522R030RQSR |
|---|---|---|
| Merek | Texas Instruments | Texas Instruments |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Drain-Source Voltage (VDS) | 600 V | 650 V |
| On-Resistance (RDS(on)) | 30 mΩ | — |
| Continuous Drain Current | 40 A | — |
| Frekuensi Pengganti | 2.2 MHz | [DATA_NEEDED: Maximum switching frequency] |
| Slew Rate | 20 V/ns to 150 V/ns | — |
| FET Hold-off | 200 V/ns | — |
| Integrated Driver | Yes | Yes (half-bridge) |
| Protection | Overcurrent, Overtemperature | — |
| Temperature Reporting | Yes | — |
| Paket | 54-VQFN (12x12 mm) | 52-VQFN (12x12 mm) Exposed Pad |
| Tipe Mounting | Surface Mount | Surface Mount |
| Qualification | JEDEC JEP180 | — |
| Gate Drive Strength | Adjustable | — |
| Suhu Kerja | -40°C to +125°C | — |
| Status RoHS | Compliant | Compliant |
| RDS(on) (Typical) | — | 30 mΩ |
| Continuous Drain Current (ID) | — | 55 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: Pulsed drain current] |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: Gate-source voltage range] |
| Protection Features | — | Overcurrent, overtemperature, temperature reporting |
| Rentang Suhu Kerja | — | [DATA_NEEDED: Operating temperature range] |
| Automotive Grade | — | Available (Q1 variant, AEC-Q100) |
| Level MSL | — | [DATA_NEEDED: MSL level] |
| Tahanan Panas, Hubung-lingkungan | — | [DATA_NEEDED: Thermal resistance] |