LMG3422R030RQZT vs LMG3522R030RQSR 比較
詳細並排比較 LMG3422R030RQZT 由 Texas Instruments 與 LMG3522R030RQSR 由 Texas Instruments. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Texas Instruments
LMG3422R030RQZT - 600V 30mΩ GaN FET with Integrated Driver | TI
LMG3422R030RQZT ✓ 啟用中Texas Instruments
LMG3522R030RQSR - 650V 30mΩ GaN FET with Integrated Driver | TI
LMG3522R030RQSR ✓ 啟用中規格比較
| 參數 | LMG3422R030RQZT | LMG3522R030RQSR |
|---|---|---|
| 品牌 | Texas Instruments | Texas Instruments |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Drain-Source Voltage (VDS) | 600 V | 650 V |
| On-Resistance (RDS(on)) | 30 mΩ | — |
| Continuous Drain Current | 40 A | — |
| 切換頻率 | 2.2 MHz | [DATA_NEEDED: Maximum switching frequency] |
| Slew Rate | 20 V/ns to 150 V/ns | — |
| FET Hold-off | 200 V/ns | — |
| Integrated Driver | Yes | Yes (half-bridge) |
| Protection | Overcurrent, Overtemperature | — |
| Temperature Reporting | Yes | — |
| 封裝 | 54-VQFN (12x12 mm) | 52-VQFN (12x12 mm) Exposed Pad |
| 安裝類型 | Surface Mount | Surface Mount |
| Qualification | JEDEC JEP180 | — |
| Gate Drive Strength | Adjustable | — |
| 工作溫度 | -40°C to +125°C | — |
| RoHS 狀態 | Compliant | Compliant |
| RDS(on) (Typical) | — | 30 mΩ |
| Continuous Drain Current (ID) | — | 55 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: Pulsed drain current] |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: Gate-source voltage range] |
| Protection Features | — | Overcurrent, overtemperature, temperature reporting |
| 工作溫度範圍 | — | [DATA_NEEDED: Operating temperature range] |
| Automotive Grade | — | Available (Q1 variant, AEC-Q100) |
| MSL 等級 | — | [DATA_NEEDED: MSL level] |
| 熱阻，接面至環境 | — | [DATA_NEEDED: Thermal resistance] |