LMG3422R030RQZT vs LMG3522R030RQSR Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci LMG3422R030RQZT disebabkan oleh Texas Instruments dan LMG3522R030RQSR disebabkan oleh Texas Instruments. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Texas Instruments
LMG3422R030RQZT - 600V 30mΩ GaN FET with Integrated Driver | TI
LMG3422R030RQZT ✓ AktifTexas Instruments
LMG3522R030RQSR - 650V 30mΩ GaN FET with Integrated Driver | TI
LMG3522R030RQSR ✓ AktifPengandingan Spesifikasi
| Parametr | LMG3422R030RQZT | LMG3522R030RQSR |
|---|---|---|
| Merek | Texas Instruments | Texas Instruments |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Drain-Source Voltage (VDS) | 600 V | 650 V |
| On-Resistance (RDS(on)) | 30 mΩ | — |
| Continuous Drain Current | 40 A | — |
| Frekuensi Pertukaran | 2.2 MHz | [DATA_NEEDED: Maximum switching frequency] |
| Slew Rate | 20 V/ns to 150 V/ns | — |
| FET Hold-off | 200 V/ns | — |
| Integrated Driver | Yes | Yes (half-bridge) |
| Protection | Overcurrent, Overtemperature | — |
| Temperature Reporting | Yes | — |
| Kemasan | 54-VQFN (12x12 mm) | 52-VQFN (12x12 mm) Exposed Pad |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Qualification | JEDEC JEP180 | — |
| Gate Drive Strength | Adjustable | — |
| Suhu Operasi | -40°C to +125°C | — |
| Status RoHS | Compliant | Compliant |
| RDS(on) (Typical) | — | 30 mΩ |
| Continuous Drain Current (ID) | — | 55 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: Pulsed drain current] |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: Gate-source voltage range] |
| Protection Features | — | Overcurrent, overtemperature, temperature reporting |
| Gambaran Suhu Operasi | — | [DATA_NEEDED: Operating temperature range] |
| Automotive Grade | — | Available (Q1 variant, AEC-Q100) |
| Aras MSL | — | [DATA_NEEDED: MSL level] |
| Tegangan Panas, Hubungan ke Lingkungan | — | [DATA_NEEDED: Thermal resistance] |