M29F800FB55N3E2 vs M29W800FB70N3E Perbandingan
Perbandingan bersamaan detil M29F800FB55N3E2 dari Micron Technology dan M29W800FB70N3E dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | M29F800FB55N3E2 | M29W800FB70N3E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | EEPROM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Ukuran Memori | 8 Mbit (1 M x 8 / 512 K x 16) | — |
| Tipe Memori | NOR Flash, SLC, Parallel | NOR Flash |
| Access Time | 55 ns | 70 ns |
| Supply Voltage Min | 4.5 V | — |
| Supply Voltage Max | 5.5 V | — |
| Antarmuka | Parallel | Parallel |
| Organisasi | Bottom boot (B suffix) | 512K x 16 / 1M x 8 |
| Lebar Bus Data | 8-bit or 16-bit (BYTE# selectable) | x8/x16 (BYTE# selectable) |
| Paket | 48-pin TSOP Type I (N suffix) | 48-TSOP (12 x 20 mm), TSOP I |
| Tipe Mounting | Surface Mount (SMD/SMT) | Surface Mount |
| Suhu Kerja | Up to +125 C (Auto Grade 3 suffix) | -40C to +125C |
| Packing | Tray (blank suffix) | — |
| Status RoHS | Compliant (E suffix) | RoHS compliant (plastic TSOP-48) |
| Programming Operations | READ, ERASE, PROGRAM via command set | — |
| Write Protection | Block protection with lockable boot block | — |
| Status Output | RB# (Ready/Busy) | — |
| Density | — | 8 Mbit (8388608 bits) |
| Supply Voltage (VCC) | — | up to 3.6 V for program, erase and read |
| Programming Time | — | 10 us per byte/word (typical) |
| Memory Blocks | — | 19 blocks, 1 boot block (bottom - FB configuration) |
| Jumlah Pin | — | 48 |
| Product Longevity Program | — | No |
| FBGA Code | — | N/A |
| Chipset Validation | — | N/A |