M29F800FB55N3E2 vs M29W800FB70N3E Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29F800FB55N3E2 disebabkan oleh Micron Technology dan M29W800FB70N3E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | M29F800FB55N3E2 | M29W800FB70N3E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | EEPROM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Saiz Ingatan | 8 Mbit (1 M x 8 / 512 K x 16) | — |
| Jenis Ingatan | NOR Flash, SLC, Parallel | NOR Flash |
| Access Time | 55 ns | 70 ns |
| Supply Voltage Min | 4.5 V | — |
| Supply Voltage Max | 5.5 V | — |
| Antaramuka | Parallel | Parallel |
| Organisasi | Bottom boot (B suffix) | 512K x 16 / 1M x 8 |
| Lebar Bus Data | 8-bit or 16-bit (BYTE# selectable) | x8/x16 (BYTE# selectable) |
| Kemasan | 48-pin TSOP Type I (N suffix) | 48-TSOP (12 x 20 mm), TSOP I |
| Jenis Pemasangan | Surface Mount (SMD/SMT) | Surface Mount |
| Suhu Operasi | Up to +125 C (Auto Grade 3 suffix) | -40C to +125C |
| Packing | Tray (blank suffix) | — |
| Status RoHS | Compliant (E suffix) | RoHS compliant (plastic TSOP-48) |
| Programming Operations | READ, ERASE, PROGRAM via command set | — |
| Write Protection | Block protection with lockable boot block | — |
| Status Output | RB# (Ready/Busy) | — |
| Density | — | 8 Mbit (8388608 bits) |
| Supply Voltage (VCC) | — | up to 3.6 V for program, erase and read |
| Programming Time | — | 10 us per byte/word (typical) |
| Memory Blocks | — | 19 blocks, 1 boot block (bottom - FB configuration) |
| Kiraan Pin | — | 48 |
| Product Longevity Program | — | No |
| FBGA Code | — | N/A |
| Chipset Validation | — | N/A |