M29F800FB55N3E2 vs M29W800FB70N3E 比較
詳細並排比較 M29F800FB55N3E2 由 Micron Technology 與 M29W800FB70N3E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | M29F800FB55N3E2 | M29W800FB70N3E |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | EEPROM | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體容量 | 8 Mbit (1 M x 8 / 512 K x 16) | — |
| 記憶體類型 | NOR Flash, SLC, Parallel | NOR Flash |
| Access Time | 55 ns | 70 ns |
| Supply Voltage Min | 4.5 V | — |
| Supply Voltage Max | 5.5 V | — |
| 介面 | Parallel | Parallel |
| 組織 | Bottom boot (B suffix) | 512K x 16 / 1M x 8 |
| 資料匯流排寬度 | 8-bit or 16-bit (BYTE# selectable) | x8/x16 (BYTE# selectable) |
| 封裝 | 48-pin TSOP Type I (N suffix) | 48-TSOP (12 x 20 mm), TSOP I |
| 安裝類型 | Surface Mount (SMD/SMT) | Surface Mount |
| 工作溫度 | Up to +125 C (Auto Grade 3 suffix) | -40C to +125C |
| Packing | Tray (blank suffix) | — |
| RoHS 狀態 | Compliant (E suffix) | RoHS compliant (plastic TSOP-48) |
| Programming Operations | READ, ERASE, PROGRAM via command set | — |
| Write Protection | Block protection with lockable boot block | — |
| Status Output | RB# (Ready/Busy) | — |
| Density | — | 8 Mbit (8388608 bits) |
| Supply Voltage (VCC) | — | up to 3.6 V for program, erase and read |
| Programming Time | — | 10 us per byte/word (typical) |
| Memory Blocks | — | 19 blocks, 1 boot block (bottom - FB configuration) |
| 腳位數 | — | 48 |
| Product Longevity Program | — | No |
| FBGA Code | — | N/A |
| Chipset Validation | — | N/A |