M29W160EB70N3E vs M29F160FB55N3F2 Perbandingan

Perbandingan bersamaan detil M29W160EB70N3E dari Micron Technology dan M29F160FB55N3F2 dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Micron Technology
M29W160EB70N3E M29W160EB70N3E - 16Mbit NOR Flash 70ns 48-TSOP | Micron

M29W160EB70N3E - 16Mbit NOR Flash 70ns 48-TSOP | Micron

M29W160EB70N3E ✓ Aktif
Micron Technology
M29F160FB55N3F2 M29F160FB55N3F2 - 16Mbit 5V NOR Flash 55ns | Micron

M29F160FB55N3F2 - 16Mbit 5V NOR Flash 55ns | Micron

M29F160FB55N3F2 Obsolete

Perbandingan Spesifikasi

Parameter Umum M29W160EB70N3E M29F160FB55N3F2
Merek Micron Technology Micron Technology
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Obsolete
Tipe Memori FLASH - NOR Parallel NOR Flash
Ukuran Memori 16 Mbit (2M x8, 1M x16) —
Organisasi 2M x8 / 1M x16 1 Mword x 16 bits / 2 Mbyte x 8 bits
Access Time 70 ns 55 ns
Antarmuka Parallel Parallel
Supply Voltage (VCC) 2.7 V to 3.6 V —
Programming Time 10 us (typical) —
Cell Type SLC NOR —
Suhu Kerja -40C to +125C -40 to +125 C
Paket / Case 48-TFSOP (0.724 in, 18.40 mm width) —
Tipe Mounting Surface Mount Surface Mount
Packaging Tray —
Speed Grade -70 —
FBGA Code N/A (TSOP package) —
Status RoHS [DATA_NEEDED: RoHS status] Compliant (lead-free)
Level MSL [DATA_NEEDED: moisture sensitivity level] —
Density — 16777 kbits (16 Mbit)
Number of Words — 1000 k
Bits per Word — 16 bits
Tegangan Pemuat — 5 V
Boot Block Architecture — Bottom Boot Block
Package Type — 48-TSOP
Termination Finish — Lead-free (F2 suffix)
Program/Erase Controller — Embedded byte/word program algorithms
Block Protection — Hardware boot block protection
Speed Grade (from MPN) — 55 (55 ns)

Spek dan Sumber

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