M29W160EB70N3E vs M29F160FB55N3F2 比較
詳細並排比較 M29W160EB70N3E 由 Micron Technology 與 M29F160FB55N3F2 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | M29W160EB70N3E | M29F160FB55N3F2 |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | Obsolete |
| 記憶體類型 | FLASH - NOR | Parallel NOR Flash |
| 記憶體容量 | 16 Mbit (2M x8, 1M x16) | — |
| 組織 | 2M x8 / 1M x16 | 1 Mword x 16 bits / 2 Mbyte x 8 bits |
| Access Time | 70 ns | 55 ns |
| 介面 | Parallel | Parallel |
| Supply Voltage (VCC) | 2.7 V to 3.6 V | — |
| Programming Time | 10 us (typical) | — |
| Cell Type | SLC NOR | — |
| 工作溫度 | -40C to +125C | -40 to +125 C |
| 封裝 / 外殼 | 48-TFSOP (0.724 in, 18.40 mm width) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Packaging | Tray | — |
| Speed Grade | -70 | — |
| FBGA Code | N/A (TSOP package) | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | Compliant (lead-free) |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | — |
| Density | — | 16777 kbits (16 Mbit) |
| Number of Words | — | 1000 k |
| Bits per Word | — | 16 bits |
| 供應電壓 | — | 5 V |
| Boot Block Architecture | — | Bottom Boot Block |
| Package Type | — | 48-TSOP |
| Termination Finish | — | Lead-free (F2 suffix) |
| Program/Erase Controller | — | Embedded byte/word program algorithms |
| Block Protection | — | Hardware boot block protection |
| Speed Grade (from MPN) | — | 55 (55 ns) |