M29W160EB70N3E vs M29F160FB55N3F2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29W160EB70N3E disebabkan oleh Micron Technology dan M29F160FB55N3F2 disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | M29W160EB70N3E | M29F160FB55N3F2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Obsolete |
| Jenis Ingatan | FLASH - NOR | Parallel NOR Flash |
| Saiz Ingatan | 16 Mbit (2M x8, 1M x16) | — |
| Organisasi | 2M x8 / 1M x16 | 1 Mword x 16 bits / 2 Mbyte x 8 bits |
| Access Time | 70 ns | 55 ns |
| Antaramuka | Parallel | Parallel |
| Supply Voltage (VCC) | 2.7 V to 3.6 V | — |
| Programming Time | 10 us (typical) | — |
| Cell Type | SLC NOR | — |
| Suhu Operasi | -40C to +125C | -40 to +125 C |
| Kemasan / Case | 48-TFSOP (0.724 in, 18.40 mm width) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Packaging | Tray | — |
| Speed Grade | -70 | — |
| FBGA Code | N/A (TSOP package) | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant (lead-free) |
| Aras MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Density | — | 16777 kbits (16 Mbit) |
| Number of Words | — | 1000 k |
| Bits per Word | — | 16 bits |
| Tegangan Pemberi Arus | — | 5 V |
| Boot Block Architecture | — | Bottom Boot Block |
| Package Type | — | 48-TSOP |
| Termination Finish | — | Lead-free (F2 suffix) |
| Program/Erase Controller | — | Embedded byte/word program algorithms |
| Block Protection | — | Hardware boot block protection |
| Speed Grade (from MPN) | — | 55 (55 ns) |