MMA1260EGR2 vs MMA1250EGR2 Perbandingan

Perbandingan bersamaan detil MMA1260EGR2 dari NXP Semiconductors dan MMA1250EGR2 dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

NXP Semiconductors
MMA1250EGR2 MMA1250EGR2 - ±5g Z-Axis Micromachined Accelerometer | NXP

MMA1250EGR2 - ±5g Z-Axis Micromachined Accelerometer | NXP

MMA1250EGR2 ⚠ Waktu Beli Terakhir

Perbandingan Spesifikasi

Parameter Umum MMA1260EGR2 MMA1250EGR2
Merek NXP Semiconductors NXP Semiconductors
Kategori Motion Sensors Motion Sensors
Status Lingkungan Hidup NRND Waktu Pembelian Terakhir
Tipe Pengukur Accelerometer Accelerometer
Sensing Axis Z —
Acceleration Range ±1.55 g —
Sensitivity 1140 mV/g to 1260 mV/g [DATA_NEEDED: sensitivity in mV/g]
Bandwidth 50 Hz (2-pole low-pass filter) 50 Hz (internal 2-pole low-pass filter)
Tegangan Pemuat 5.0 V (nominal) 5.0 V nominal (per legacy MMA1250 datasheet typical conditions)
Tipe Output Analog voltage (ratiometric) Analog, ratiometric
Output at 0 g 2.5 V (nominal, ratiometric) —
Self-Test Yes (electrostatic force activation) —
Paket 16-pin SOIC (SOG) 16-SOIC (SOP-16), surface mount
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja [DATA_NEEDED: operating temperature range] -40 C to +85 C (industrial grade)
Arus Pemuat [DATA_NEEDED: typical supply current] [DATA_NEEDED: quiescent current in mA]
Zero-g Offset Drift [DATA_NEEDED: zero-g offset over temperature] —
Status RoHS Compliant (per distributor listings) [DATA_NEEDED: confirm per NXP product page]
Axis — Z (perpendicular to package top)
Full-Scale Range — ±5 g
Zero-g Output — Approximately Vdd/2 (ratiometric)
Sensor Technology — Micromachined silicon capacitive
Internal Features — Signal conditioning, 2-pole low-pass filter, temperature compensation, self-test

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon