MMA1260EGR2 vs MMA1250EGR2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci MMA1260EGR2 disebabkan oleh NXP Semiconductors dan MMA1250EGR2 disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

NXP Semiconductors
MMA1250EGR2 MMA1250EGR2 - ±5g Z-Axis Micromachined Accelerometer | NXP

MMA1250EGR2 - ±5g Z-Axis Micromachined Accelerometer | NXP

MMA1250EGR2 ⚠ Bahagian terakhir untuk beli

Pengandingan Spesifikasi

Parametr MMA1260EGR2 MMA1250EGR2
Merek NXP Semiconductors NXP Semiconductors
Kategori Motion Sensors Motion Sensors
Status Lingkungan Hidup NRND Masa Terakhir Dibeli
Jenis Sensus Accelerometer Accelerometer
Sensing Axis Z —
Acceleration Range ±1.55 g —
Sensitivity 1140 mV/g to 1260 mV/g [DATA_NEEDED: sensitivity in mV/g]
Bandwidth 50 Hz (2-pole low-pass filter) 50 Hz (internal 2-pole low-pass filter)
Tegangan Pemberi Arus 5.0 V (nominal) 5.0 V nominal (per legacy MMA1250 datasheet typical conditions)
Jenis Output Analog voltage (ratiometric) Analog, ratiometric
Output at 0 g 2.5 V (nominal, ratiometric) —
Self-Test Yes (electrostatic force activation) —
Kemasan 16-pin SOIC (SOG) 16-SOIC (SOP-16), surface mount
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi [DATA_NEEDED: operating temperature range] -40 C to +85 C (industrial grade)
Arus Pemberi Arus [DATA_NEEDED: typical supply current] [DATA_NEEDED: quiescent current in mA]
Zero-g Offset Drift [DATA_NEEDED: zero-g offset over temperature] —
Status RoHS Compliant (per distributor listings) [DATA_NEEDED: confirm per NXP product page]
Axis — Z (perpendicular to package top)
Full-Scale Range — ±5 g
Zero-g Output — Approximately Vdd/2 (ratiometric)
Sensor Technology — Micromachined silicon capacitive
Internal Features — Signal conditioning, 2-pole low-pass filter, temperature compensation, self-test

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