MMA1260EGR2 vs MMA1250EGR2 比較

詳細並排比較 MMA1260EGR2 由 NXP Semiconductors 與 MMA1250EGR2 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

NXP Semiconductors
MMA1250EGR2 MMA1250EGR2 - ±5g Z-Axis Micromachined Accelerometer | NXP

MMA1250EGR2 - ±5g Z-Axis Micromachined Accelerometer | NXP

MMA1250EGR2 ⚠ 最後購買機會

規格比較

參數 MMA1260EGR2 MMA1250EGR2
品牌 NXP Semiconductors NXP Semiconductors
類別 Motion Sensors Motion Sensors
生命週期狀態 NRND 最後購買
感測器類型 Accelerometer Accelerometer
Sensing Axis Z —
Acceleration Range ±1.55 g —
Sensitivity 1140 mV/g to 1260 mV/g [DATA_NEEDED: sensitivity in mV/g]
Bandwidth 50 Hz (2-pole low-pass filter) 50 Hz (internal 2-pole low-pass filter)
供應電壓 5.0 V (nominal) 5.0 V nominal (per legacy MMA1250 datasheet typical conditions)
輸出類型 Analog voltage (ratiometric) Analog, ratiometric
Output at 0 g 2.5 V (nominal, ratiometric) —
Self-Test Yes (electrostatic force activation) —
封裝 16-pin SOIC (SOG) 16-SOIC (SOP-16), surface mount
安裝類型 Surface Mount Surface Mount
工作溫度 [DATA_NEEDED: operating temperature range] -40 C to +85 C (industrial grade)
供應電流 [DATA_NEEDED: typical supply current] [DATA_NEEDED: quiescent current in mA]
Zero-g Offset Drift [DATA_NEEDED: zero-g offset over temperature] —
RoHS 狀態 Compliant (per distributor listings) [DATA_NEEDED: confirm per NXP product page]
Axis — Z (perpendicular to package top)
Full-Scale Range — ±5 g
Zero-g Output — Approximately Vdd/2 (ratiometric)
Sensor Technology — Micromachined silicon capacitive
Internal Features — Signal conditioning, 2-pole low-pass filter, temperature compensation, self-test

資料表與資源

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