MRF6S19140HSR5 vs MRF6S19140HR5 Perbandingan
Perbandingan bersamaan detil MRF6S19140HSR5 dari NXP Semiconductors dan MRF6S19140HR5 dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
NXP Semiconductors
MRF6S19140HSR5 - 29W RF Power LDMOS Transistor 1.93-1.99GHz | NXP
MRF6S19140HSR5 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | MRF6S19140HSR5 | MRF6S19140HR5 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | NXP Semiconductors | NXP Semiconductors (formerly Freescale) |
| Original Manufacturer | Freescale Semiconductor | — |
| Part Status | Active | — |
| Tipe Transistor | RF Power LDMOS (N-Channel) | N-Channel RF Power LDMOS |
| Drain-Source Voltage (Vdss) | 68 V | 68 V (max) |
| Operating Drain Voltage (typical) | 28 V | 28 V |
| Drain Current (Id) | 1.15 A | — |
| Frequency Range | 1.93 GHz to 1.99 GHz | — |
| Output Power (Pout) | 29 W | 29 W (CW or pulsed) |
| Power Gain (Gps) | 16 dB | — |
| Test Condition | Two-tone W-CDMA, 1.96 GHz | — |
| Paket / Case | NI-880S | NI-880H-2L ceramic flange |
| Tipe Mounting | Chassis Mount / Screw Clamp | Chassis / flange mount (bolt-down) |
| Suhu Kerja | -40 C to +150 C (junction) | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| ESD Protection | Yes (integrated) | — |
| Technology | HV6 LDMOS (later branded NXP HV6) | — |
| Pulsed Drain Current (Id) | — | 1.15 A |
| Operating Frequency | — | 1.93 GHz to 1.99 GHz |
| Small-Signal Gain | — | 16 dB (typical) |
| Process Technology | — | HV6 LDMOS |
| Lead-Free | — | [DATA_NEEDED: lead-free status] |
| Rentang Suhu Kerja | — | [DATA_NEEDED: operating temp range] |
| Channel-to-Flange Thermal Resistance | — | 0.45 C/W (estimated, datasheet figure) |