MRF6S19140HSR5 vs MRF6S19140HR5 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MRF6S19140HSR5 disebabkan oleh NXP Semiconductors dan MRF6S19140HR5 disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
NXP Semiconductors
MRF6S19140HSR5 - 29W RF Power LDMOS Transistor 1.93-1.99GHz | NXP
MRF6S19140HSR5 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | MRF6S19140HSR5 | MRF6S19140HR5 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | NXP Semiconductors | NXP Semiconductors (formerly Freescale) |
| Original Manufacturer | Freescale Semiconductor | — |
| Part Status | Active | — |
| Jenis Transistor | RF Power LDMOS (N-Channel) | N-Channel RF Power LDMOS |
| Drain-Source Voltage (Vdss) | 68 V | 68 V (max) |
| Operating Drain Voltage (typical) | 28 V | 28 V |
| Drain Current (Id) | 1.15 A | — |
| Frequency Range | 1.93 GHz to 1.99 GHz | — |
| Output Power (Pout) | 29 W | 29 W (CW or pulsed) |
| Power Gain (Gps) | 16 dB | — |
| Test Condition | Two-tone W-CDMA, 1.96 GHz | — |
| Kemasan / Case | NI-880S | NI-880H-2L ceramic flange |
| Jenis Pemasangan | Chassis Mount / Screw Clamp | Chassis / flange mount (bolt-down) |
| Suhu Operasi | -40 C to +150 C (junction) | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| ESD Protection | Yes (integrated) | — |
| Technology | HV6 LDMOS (later branded NXP HV6) | — |
| Pulsed Drain Current (Id) | — | 1.15 A |
| Operating Frequency | — | 1.93 GHz to 1.99 GHz |
| Small-Signal Gain | — | 16 dB (typical) |
| Process Technology | — | HV6 LDMOS |
| Lead-Free | — | [DATA_NEEDED: lead-free status] |
| Gambaran Suhu Operasi | — | [DATA_NEEDED: operating temp range] |
| Channel-to-Flange Thermal Resistance | — | 0.45 C/W (estimated, datasheet figure) |