MRF6S19140HSR5 vs MRF6S19140HR5 比較

詳細並排比較 MRF6S19140HSR5 由 NXP Semiconductors 與 MRF6S19140HR5 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

NXP Semiconductors
MRF6S19140HSR5 MRF6S19140HSR5 - 29W RF Power LDMOS Transistor 1.93-1.99GHz | NXP

MRF6S19140HSR5 - 29W RF Power LDMOS Transistor 1.93-1.99GHz | NXP

MRF6S19140HSR5 ✓ 啟用中
NXP Semiconductors
MRF6S19140HR5 MRF6S19140HR5 - 29W RF Power LDMOS, 1.93-1.99GHz | NXP

MRF6S19140HR5 - 29W RF Power LDMOS, 1.93-1.99GHz | NXP

MRF6S19140HR5 ✓ 啟用中

規格比較

參數 MRF6S19140HSR5 MRF6S19140HR5
品牌 NXP Semiconductors NXP Semiconductors
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer NXP Semiconductors NXP Semiconductors (formerly Freescale)
Original Manufacturer Freescale Semiconductor —
Part Status Active —
電晶體類型 RF Power LDMOS (N-Channel) N-Channel RF Power LDMOS
Drain-Source Voltage (Vdss) 68 V 68 V (max)
Operating Drain Voltage (typical) 28 V 28 V
Drain Current (Id) 1.15 A —
Frequency Range 1.93 GHz to 1.99 GHz —
Output Power (Pout) 29 W 29 W (CW or pulsed)
Power Gain (Gps) 16 dB —
Test Condition Two-tone W-CDMA, 1.96 GHz —
封裝 / 外殼 NI-880S NI-880H-2L ceramic flange
安裝類型 Chassis Mount / Screw Clamp Chassis / flange mount (bolt-down)
工作溫度 -40 C to +150 C (junction) —
RoHS 狀態 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
ESD Protection Yes (integrated) —
Technology HV6 LDMOS (later branded NXP HV6) —
Pulsed Drain Current (Id) — 1.15 A
Operating Frequency — 1.93 GHz to 1.99 GHz
Small-Signal Gain — 16 dB (typical)
Process Technology — HV6 LDMOS
Lead-Free — [DATA_NEEDED: lead-free status]
工作溫度範圍 — [DATA_NEEDED: operating temp range]
Channel-to-Flange Thermal Resistance — 0.45 C/W (estimated, datasheet figure)

資料表與資源

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