MRF6S19140HSR5 vs MRF6S19140HR5 Karşılaştırma
Ayrıntılı yan yana karşılaştırma MRF6S19140HSR5 tarafından NXP Semiconductors ve MRF6S19140HR5 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
NXP Semiconductors
MRF6S19140HSR5 - 29W RF Power LDMOS Transistor 1.93-1.99GHz | NXP
MRF6S19140HSR5 ✓ Aktif
Özellik Karşılaştırması
| Parametre | MRF6S19140HSR5 | MRF6S19140HR5 |
|---|---|---|
| Marka | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | NXP Semiconductors | NXP Semiconductors (formerly Freescale) |
| Original Manufacturer | Freescale Semiconductor | — |
| Part Status | Active | — |
| Transistor Türü | RF Power LDMOS (N-Channel) | N-Channel RF Power LDMOS |
| Drain-Source Voltage (Vdss) | 68 V | 68 V (max) |
| Operating Drain Voltage (typical) | 28 V | 28 V |
| Drain Current (Id) | 1.15 A | — |
| Frequency Range | 1.93 GHz to 1.99 GHz | — |
| Output Power (Pout) | 29 W | 29 W (CW or pulsed) |
| Power Gain (Gps) | 16 dB | — |
| Test Condition | Two-tone W-CDMA, 1.96 GHz | — |
| Paket / Kas | NI-880S | NI-880H-2L ceramic flange |
| Montaj Türü | Chassis Mount / Screw Clamp | Chassis / flange mount (bolt-down) |
| İşletim Sıcaklığı | -40 C to +150 C (junction) | — |
| RoHS Durumu | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| ESD Protection | Yes (integrated) | — |
| Technology | HV6 LDMOS (later branded NXP HV6) | — |
| Pulsed Drain Current (Id) | — | 1.15 A |
| Operating Frequency | — | 1.93 GHz to 1.99 GHz |
| Small-Signal Gain | — | 16 dB (typical) |
| Process Technology | — | HV6 LDMOS |
| Lead-Free | — | [DATA_NEEDED: lead-free status] |
| İşletim Sıcaklığı Aralığı | — | [DATA_NEEDED: operating temp range] |
| Channel-to-Flange Thermal Resistance | — | 0.45 C/W (estimated, datasheet figure) |