NT6AN8T0SA vs NT6AN8T6WBJ1B1 Perbandingan
Perbandingan bersamaan detil NT6AN8T0SA dari Nanya Technology dan NT6AN8T6WBJ1B1 dari Nanya Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | NT6AN8T0SA | NT6AN8T6WBJ1B1 |
|---|---|---|
| Merek | Nanya Technology | Nanya Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | LPDDR2 SDRAM | DDR4 SDRAM |
| Density | 2Gb | — |
| Organisasi | 64M x 32 | — |
| Tegangan Pemuat | 1.2V | 1.2 V |
| I/O Voltage | 1.2V | — |
| Laju Data | 1066 Mbps (533 MHz) | 3200 MT/s |
| Rentang Suhu Kerja | -30°C to +85°C | — |
| Paket | FBGA | 96-ball FBGA |
| Tipe Mounting | Surface Mount | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Refresh Period | 64ms at 85°C | — |
| Burst Length | 4 or 8 | 8 (BL8), 4 (BC4) |
| On-Die Termination | Yes | Yes (ODT) |
| DLL | Yes | — |
| Ukuran Memori | — | 8 Gb (512M x 16) |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Latensi CAS | — | 22 cycles |
| Suhu Kerja | — | 0C to +95C (TC) |
| Refresh | — | Auto-refresh, self-refresh |
| Bank Groups | — | 4 groups of 4 banks |
| Row Address | — | 16 bits |
| Column Address | — | 10 bits |