STP20N60M2 vs IPP60R190P6XKSA1 Perbandingan
Perbandingan bersamaan detil STP20N60M2 dari STMicroelectronics dan IPP60R190P6XKSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
STMicroelectronics
STP20N60M2 - 600V 20A N-Channel Power MOSFET | STMicroelectronics
STP20N60M2 Obsolete
Perbandingan Spesifikasi
| Parameter Umum | STP20N60M2 | IPP60R190P6XKSA1 |
|---|---|---|
| Merek | STMicroelectronics | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Obsolete | Aktif |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at 25°C | 20 A | — |
| Continuous Drain Current (ID) at 100°C | 12 A | — |
| Pulsed Drain Current (IDM) | 80 A | — |
| On-Resistance (RDS(on)) | 0.19 ohm typical, 0.23 ohm max | — |
| Gate-Source Voltage (VGS) | ±25 V | — |
| Gate Threshold Voltage (VGS(th)) | 2 V to 4 V | — |
| Total Gate Charge (Qg) | 45 nC | — |
| Input Capacitance (Ciss) | 1900 pF | — |
| Output Capacitance (Coss) | 120 pF | — |
| Reverse Transfer Capacitance (Crss) | 5 pF | — |
| Avalanche Energy (EAS) | 400 mJ | — |
| Thermal Resistance (Junction-to-Case) | 1.67 °C/W | — |
| Tahanan Panas, Hubung-lingkungan | 62.5 °C/W | — |
| Rentang Suhu Kerja | -55°C to +150°C | -55C to +150C (junction) |
| Paket | TO-220 | PG-TO220-3 (through-hole) |
| Tipe Mounting | Through Hole | Through Hole |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolMOS P6 |
| Technology | — | Superjunction (SJ) MOSFET |
| Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc=25C | — | 20.2 A |
| On-Resistance RDS(on) max at 25C | — | 190 mOhm |
| Total Power Dissipation (Ptot) at Tc=25C | — | 151 W |
| Gate Drive Voltage (typical) | — | 10 V |
| Lead-Free | — | Yes |
| Level MSL | — | Not applicable (through-hole) |
| Product Variant | — | XKSA1 (industrial grade, tube pack) |